Номер журнала: 2018.3
Заголовок статьи: Parameters calculation of a logical channel for a secondary user in a group of two AlGaN/GaN Schottky barrier diodes with Ta, Ni, WSi and TiN anodes
In this paper, AlGaN/GaN lateral Schottky barrier diodes (SBD) with anodes based on Ta, Ni, WSi and Ta are considered. Heterostructure AlGaN/i-GaN/buffer GaN was grown by Metal Organic Chemical Vapor Deposition (MOCVD) on silicon (111) substrate. All di-odes had 5 nm (50%) anodes recess. Anode-cathode distance was varied from 3 to 7 μm. Diodes periphery (anodes width, W) was 10 mm. Diodes turn-ON voltage (by forward current 1 mA/mm) critically depends on anodes material and was 0.25 V, 0.45 V, 0.65 V and 1.6 V for Ta, Ni, WSi and TiN anodes respectively. Specific leakage current also depends on anodes material and was 67 μA/mm, 13 μA/mm, 5 μA/mm and 0.85 μA/mm for Ta, Ni, WSi and TiN respectively.
I. Fedin, E. Erofeev, V. Fedina
GaN on silicon, AlGaN/GaN, Schottky barrier diode, anode material
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