sibsutisВестник СибГУТИThe Herald of the Siberian State University of Telecommunications and Information Science1998-6920СибГУТИ10.55648/1998-6920-2022-16-2-94-109sibsutis-137Research ArticleСтатьиЕрохинВ. В.ErokhinV. V.
Ерохин Виктор Валерьевич научный сотрудник НИИРП НИЛ «Системы на кристалле»
644050, Омск, просп. Мира, 11
Viktor V. Erokhin, Research scientist, «Systems on Chip» research laboratory
Omsk
viktor_erohin@mail.ruОмГТУРоссияOmsk State Technical UniversityRussian Federation2022220720220294109Copyright © Ерохин В.В., 20222022Ерохин В.В.Erokhin V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.sibsutis.ru/jour/article/view/137ReferencesRuehli A. E., Antonini G., Jiang L. Skin-Effect Model for Round Wires in PEEC // Proc. International Symposium on Electromagnetic Compatibility (EMC Europe). Rome, Italy, 2012. P. 6.Albert E. Ruehli, Giulio Antonini, Lijun Jiang. Skin-Effect Model for Round Wires in PEEC. International Symposium on Electromagnetic Compatibility - EMC EUROPE, Rome, Italy, 2012, 6 p.Ren-Jia Chan, Jyh-Chyurn Guo. Analysis and Modeling of Skin and Proximity Effects for Millimeter-Wave Inductors Design in Nanoscale Si CMOS // Proc. 9th European Microwave Integrated Circuit Conference. Rome, Italy, 2014. P. 13–16.Ren-Jia Chan, Jyh-Chyurn Guo. Analysis and Modeling of Skin and Proximity Effects for MillimeterWave Inductors Design in Nanoscale Si CMOS. 9th European Microwave Integrated Circuit Conference, Rome, Italy, 2014, pp. 13-16.Rotella F. M., Blaschke V., Howard D. A Broad-Band Scalable Lumped-Element Inductor Model Using Analytic Expressions to Incorporate Skin Effect, Substrate Loss, and Proximity Effect // Digest. International Electron Devices Meeting, San Francisco, CA, USA, 2002. P. 471–474.F.M. Rotella, V. Blaschke, D. Howard. A Broad-Band Scalable Lumped-Element Inductor Model Using Analytic Expressions to Incorporate Skin Effect, Substrate Loss, and Proximity Effect. Digest. International Electron Devices Meeting, San Francisco, CA, USA, 2002, pp. 471-474.Cao Yu, Groves R. A., Zamdmer N. D. Frequency-Independent Equivalent Circuit Model for On-chip Spiral Inductors // Proc. IEEE Custom Integrated Circuits Conference, Orlando, FL, USA, 2002. P. 217–220.Yu Cao, R.A. Groves, N.D. Zamdmer. Frequency-Independent Equivalent Circuit Model for On-chip Spiral Inductors. Proceedings of the IEEE 2002 Custom Integrated Circuits Conference, Orlando, FL, USA, 2002, pp. 217-220.Kim S., Neikirk D. P. Compact Equivalent Circuit Model for the Skin Effect // Proc. IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, USA, 1996. P. 1815–1818.S. Kim, D.P. Neikirk. Compact Equivalent Circuit Model for the Skin Effect. IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, USA, 1996, pp. 1815-1818.Elsaadi M., Tayel M. B., Steenson D. P. An Empirical Formula of Fringing Field Capacitance for MEMS Tunable Capacitor Actuators // Proc. IEEE 1st International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering (MI-STA), Tripoli, Libya, 2021. P. 674–678.Mussa. Elsaadi, Mazhar B. Tayel, D. P. Steenson. An Empirical Formula of Fringing Field Capacitance for MEMS Tunable Capacitor Actuators. IEEE 1st International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering MI-STA, Tripoli, Libya, 2021, pp. 674-678.Ehud Yariv. Edge corrections for parallel-plate capacitors // European Journal of Applied Mathematics, Cambridge, England, 2020. P. 226–241.Ehud Yariv. Edge corrections for parallel-plate capacitors. European Journal of Applied Mathematics, Cambridge, England, 2020, pp. 226-241.Ting Chen, Jin He, Pengwei Chen, Xuanyu Chen, Hao Wang, Sheng Chang, Qijun Huang. Accurate Modeling of Three-Port Center-tapped Octagonal Inductors for SPDT Switch Design in 0.13-μm BiCMOS // Proc. IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB), Nanjing, China, 2016. P. 4.Ting Chen, Jin He, Pengwei Chen, Xuanyu Chen, Hao Wang, Sheng Chang, Qijun Huang. Accurate Modeling of Three-Port Center-tapped Octagonal Inductors for SPDT Switch Design in 0.13-μm BiCMOS. IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB), Nanjing, China, 2016, 4 p.Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja. Modeling of Two Port Center-tapped to ground and Three Port scalable symmetrical inductor // Proc. International Symposium on Integrated Circuits (ISIC), Singapore, 2014. P. 540–543.Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja. Modeling of Two Port Center-tapped to ground and Three Port scalable symmetrical inductor. International Symposium on Integrated Circuits (ISIC), Singapore, 2014, pp. 540-543.Chen J., Liou J. J. Improved and Physics-Based Model for Symmetrical Spiral Inductors // IEEE Transactions on Electron Devices. 2006. V. 53, Is. 6. P. 1300–1309.Ji Chen, J.J. Liou. Improved and Physics-Based Model for Symmetrical Spiral Inductors. IEEE Transactions on Electron Devices, vol. 53, iss. 6, 2006, pp. 1300-1309.Goni A.,del Pino J., Gonzalez B., Hernandez A. An Analytical Model of Electric Substrate Losses for Planar Spiral Inductors on Silicon // IEEE Transactions on Electron Devices. 2007. V. 54, Is. 3. P. 546–553.Amaya Goni, Javier del Pino, Benito Gonzalez, Antonio Hernandez. An Analytical Model of Electric Substrate Losses for Planar Spiral Inductors on Silicon. IEEE Transactions on Electron Devices, vol. 54, iss. 3, 2007, pp. 546-553.Jeyaraman S., Vanukuru V., Nair D. R., Chakravorty A. A Substrate Model for On-Chip Tapered Spiral Inductors with Forward and Reverse Excitations // IEEE Transactions on Electron Devices. 2019. V. 66, Is. 1. P. 4.J. Sathyasree, Venkata Vanukuru, Deleep R. Nair, Anjan Chakravorty. A Substrate Model for On-Chip Tapered Spiral Inductors with Forward and Reverse Excitations. IEEE Transactions on Electron Devices, vol. 66, iss. 1, 2019, 4 p.Jeyaraman S., Vanukuru V.,Nair D. R., Chakravorty A. Compact Modeling of Series Stacked Tapered Spiral Inductors // Proc. IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA, 2019. P. 3.Sathyasree Jeyaraman, Venkata Vanukuru, Deleep Nair, Anjan Chakravorty. Compact Modeling of Series Stacked Tapered Spiral Inductors. IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA, 2019, 3 p.Passos F., Fino M. H., and Moreno E. R. Fully Analytical Characterization of the Series Inductance of Tapered Integrated Inductors // International Journal of Electronics and Telecommunications, Poland, 2014. P. 73–77.Fabio Passos, M. Helena Fino, and Elisenda R. Moreno. Fully Analytical Characterization of the Series Inductance of Tapered Integrated Inductors. International Journal of Electronics and Telecommunications, Poland, 2014, pp. 73-77.Fino M. H. Using an Integrated Inductor Model in Qucs // Proc. 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland, 2014. P. 66–69.Maria Helena Fino. Using an Integrated Inductor Model in Qucs. Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland, 2014, pp. 6669.Zolog M., Pitica D., Pop O. Characterization of Spiral Planar Inductors Built on Printed Circuit Boards // Proc. 30th International Spring Seminar on Electronics Technology (ISSE), ClujNapoca, Romania, 2007. P. 308–313.Monica Zolog, Dan Pitica, Ovidiu Pop. Characterization of Spiral Planar Inductors Built on Printed Circuit Boards. 30th International Spring Seminar on Electronics Technology (ISSE), Cluj-Napoca, Romania, 2007, pp. 308-313.Koutsoyannopoulos Y. K., Papananos Y. Systematic Analysis and Modeling of Integrated Inductors and Transformers in RF IC Design // IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 2000. V. 47, Is. 8. P. 699–713.Y.K. Koutsoyannopoulos, Y. Papananos. Systematic Analysis and Modeling of Integrated Inductors and Transformers in RF IC Design. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 47, iss. 8, 2000, pp. 699-713.Chen J., Liou J. J. On-Chip Spiral Inductors for RF Applications: An Overview // Journal of Semiconductor Technology and Science. 2004. P. 149–167.Ji Chen, J.J. Liou. On-Chip Spiral Inductors for RF Applications: An Overview. Journal of Semiconductor Technology and Science, 2004, pp. 149-167.Shaltout A. H., Gregori S. Optimizing the Inductance Time-Constant Ratio of Polygonal Integrated Inductors // Proc. IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), Windsor, ON, Canada, 2018. P. 448–451.Ahmed H. Shaltout, Stefano Gregori. Optimizing the Inductance Time-Constant Ratio of Polygonal Integrated Inductors. IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), Windsor, ON, Canada, 2018, pp. 448-451.Heng-Ming Hsu, Jen-Zien Chang, Hung-Chi Chien. Coupling Effect of On-Chip Inductor with Variable Metal Width // IEEE Microwave and Wireless Components Letters. 2007. V. 17, Is. 7. P. 498–500.Heng-Ming Hsu, Jen-Zien Chang, Hung-Chi Chien. Coupling Effect of On-Chip Inductor with Variable Metal Width. IEEE Microwave and Wireless Components Letters, vol. 17, iss. 7, 2007, pp. 498-500.
The authors declare that there are no conflicts of interest present.