sibsutisВестник СибГУТИThe Herald of the Siberian State University of Telecommunications and Information Science1998-6920СибГУТИsibsutis-311Research ArticleСтатьиAlGaN/GaN диоды с барьерами Шоттки на основе Ta, Ni, WSi и TiNParameters calculation of a logical channel for a secondary user in a group of two AlGaN/GaN Schottky barrier diodes with Ta, Ni, WSi and TiN anodesФединИ. В.FedinI. ..fedinivanvla-dimirovich@mail.ruЕрофеевЕ. В.ErofeevE. ..erofeev@sibmail.comФединаВ. В.FedinaV. ..lerochka_2009@mail.ruАО НПФ «Микран»Russian FederationНИИСЭС ТУСУРRussian FederationТУСУРRussian Federation201824102022036268Copyright © Федин И.В., Ерофеев Е.В., Федина В.В., 20222022Федин И.В., Ерофеев Е.В., Федина В.В.Fedin I..., Erofeev E..., Fedina V...Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.sibsutis.ru/jour/article/view/311

В данной работе представлены планарные AlGaN/GaN диоды с барьером Шоттки, изготовленные на кремниевой подложке по бездрагметальной технологии с применением ре-цесса анода. В качестве анодов использовались металлизации X/Ti/Al/Ti (30/20/350/20 нм), где X - это Ta, Ni, WSi или TiN. Расстояние анод-катод La-к варьировалось от 3 до 7 мкм. Ширина анода составляла 100 мкм. Для La-к = 7 мкм были получены следующие результаты: напряжение открывания диода (Uotkp) составило 0.25 В, 0.45 В, 0.65 В, 1.6 В для Ta, Ni, WSi и TiN анодов соответственно; ток прямого смещения при U = 1.2 В составил 68 мА/мм, 55 мА/мм, 20 мА/мм и 0.16 мА/мм для Ta, Ni, WSi и TiN анодов соответственно; обратный ток утечки (Ioep) составил 67 мкА/мм, 13 мкА/мм, 5 мкА/мм и 0.85 мкА/мм для Ta, Ni, WSi и TiN анодов соответственно.

In this paper, AlGaN/GaN lateral Schottky barrier diodes (SBD) with anodes based on Ta, Ni, WSi and Ta are considered. Heterostructure AlGaN/i-GaN/buffer GaN was grown by Metal Organic Chemical Vapor Deposition (MOCVD) on silicon (111) substrate. All diodes had 5 nm (50%) anodes recess. Anode-cathode distance was varied from 3 to 7 цт. Diodes periphery (anodes width, W) was 10 mm. Diodes turn-ON voltage (by forward current 1 mA/mm) critically depends on anodes material and was 0.25 V, 0.45 V, 0.65 V and 1.6 V for Ta, Ni, WSi and TiN anodes respectively. Specific leakage current also depends on anodes material and was 67 цЛ/тт, 13 цЛ/тт, 5 цЛ/тт and 0.85 цЛ/тт for Ta, Ni, WSi and TiN respectively.

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The authors declare that there are no conflicts of interest present.