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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">sibsutis</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник СибГУТИ</journal-title><trans-title-group xml:lang="en"><trans-title>The Herald of the Siberian State University of Telecommunications and Information Science</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1998-6920</issn><publisher><publisher-name>СибГУТИ</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.55648/1998-6920-2022-16-4-96-103</article-id><article-id custom-type="elpub" pub-id-type="custom">sibsutis-583</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Модель проводимости печатных графеновых пластин</article-title><trans-title-group xml:lang="en"><trans-title>Conductivity model of graphene printed plates</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Черевко</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Cherevko</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Черевко Александр Григорьевич, к.ф.-м.н., доцент, заведующий кафедрой физики, заведующий лабораторией физических основ телекоммуникаций</p><p>630102, Новосибирск, ул. Кирова, 86</p></bio><bio xml:lang="en"><p>Alexander G. Cherevko, Philosophy doctor, Associate Professor</p><p>Novosibirsk</p></bio><email xlink:type="simple">persp14@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Антонова</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Antonova</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Антонова Ирина Вениаминовна, д.ф-м.н., профессор, кафедра физики</p><p>6301 02, Новосибирск, ул. Кирова, 86);</p><p>630090, Новосибирск, просп. Лаврентьева, 13</p><p>тел. (383) 333-0699</p><p> </p></bio><bio xml:lang="en"><p>Irina V. Antonova, Doctor of Physical and Mathematical Sciences, Professor</p><p>Novosibirsk</p></bio><email xlink:type="simple">antonova@isp.nsc.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Марьясов</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Maryasov</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Марьясов Александр Георгиевич, к.ф.-м.н., c.н.c.</p></bio><bio xml:lang="en"><p>Alexander G. Maryasov, Philosophy doctor</p><p>Novosibirsk</p></bio><email xlink:type="simple">alexander_maryasov@yahoo.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Черевко</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Cherevko</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Черевко Александр Александрович, к.ф.-м.н., снс</p><p>630090, Новосибирск, просп. Лаврентьева, 15</p></bio><bio xml:lang="en"><p>Alexander A. Cherevko, Philosophy doctor Lavrentyev</p><p>Novosibirsk</p></bio><email xlink:type="simple">cherevko@mail.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>СибГУТИ</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Siberian State University of Telecommunications and Information Science (SibSUTIS)</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>СибГУТИ; Институт физики полупроводников им. А. В. Ржанова СО РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Siberian State University of Telecommunications and Information Science (SibSUTIS); Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Институт гидродинамики им. М. А. Лаврентьева СО РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Hydrodynamics of the Siberian Branch of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>04</day><month>01</month><year>2023</year></pub-date><volume>16</volume><issue>4</issue><fpage>96</fpage><lpage>103</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Черевко А.Г., Антонова И.В., Марьясов А.Г., Черевко А.А., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Черевко А.Г., Антонова И.В., Марьясов А.Г., Черевко А.А.</copyright-holder><copyright-holder xml:lang="en">Cherevko A.G., Antonova I.V., Maryasov A.G., Cherevko A.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestnik.sibsutis.ru/jour/article/view/583">https://vestnik.sibsutis.ru/jour/article/view/583</self-uri><abstract><p>Разработана модель, объясняющая зависимость сопротивления проводящих графеновых пластин, полученных методом многослойной струйной печати, от поверхностного сопротивления слоя и числа слоёв. Печатная проводящая пластина графена является слоистой, что обусловлено методом изготовления пластины. Проведено сравнение результатов моделирования с экспериментальными результатами, полученными авторами. Пластины печатались двумя типами чернил: графеновыми чернилами (1) и графеновыми чернилами с полимерными добавками (2). Достоверность аппроксимации экспериментальных данных по поверхностной проводимости пластин, напечатанных первым и вторым типом не хуже 99.5 % и 98.5 %. соответственно. Модель позволила оценить эффективную толщину печатных слоев графена, образующих проводящую графеновую пластину. Рассмотрен механизм проводимости слоев.</p></abstract><trans-abstract xml:lang="en"><p>A model has been developed to explain the dependence of the surface resistance of printed conductive graphene plates on their surface resistance. The model assumes that the printed conductive graphene plate is layered. The simulation results are compared with the experimental results obtained by the authors. The plates were printed with two types of ink: 1 -graphene ink. 2- graphene ink with polymer additives. The reliability of the approximation of experimental data on the surface conductivity of plates printed by the first and the second types is no worse than 99.5% and 98.5%. respectively. The model made it possible to estimate the effective thickness of graphene printed layers forming a conductive graphene plate. The mechanism of layer conduction is considered.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>проводимость</kwd><kwd>графен</kwd><kwd>чернила</kwd><kwd>2D-печать</kwd><kwd>слоистость</kwd><kwd>5G</kwd></kwd-group><kwd-group xml:lang="en"><kwd>conductivity</kwd><kwd>graphene</kwd><kwd>ink</kwd><kwd>2D printing</kwd><kwd>layering</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Cherevko A. G., Kriging A. S., Ivanov A. I., Soots R. A., Antonova I. V. Benefits of Printed Graphene with Variable Resistance for Flexible and Ecological 5G Band Antennas // Materials. 2022. V. 15, 7267. https://doi.org/10.3390/ma15207267.</mixed-citation><mixed-citation xml:lang="en">Cherevko A.G., Kriging A.S., Ivanov A.I., Soots R.A., Antonova I.V. Benefits of Printed Graphene with Variable Resistance for Flexible and Ecological 5G Band Antennas. 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