sibsutisВестник СибГУТИThe Herald of the Siberian State University of Telecommunications and Information Science1998-6920СибГУТИ10.55648/1998-6920-2023-17-2-69-83sibsutis-759Research ArticleСтатьиОтказы интегральных схем, вызванные пробоем диэлектрикаFailures of ICs Caused by Dielectric Breakdownhttps://orcid.org/0000-0002-2974-0497ШубинВ. В.ShubinV. V.

Шубин Владимир Владимирович, к.т.н., доцент кафедры технической электроники СибГУТИ, начальник отдела по разработке аналоговых ИМС АО «НЗПП Восток»

630082, Новосибирск, ул. Дачная, 60

Vladimir V. Shubin, Cand. of Sci. (Engineering), assistant professor of the Department of Technical Electronics of Sib-SUTIS, Head of the Development of analog ICs of JSC "NZPP Vostok department"

630082, Novosibirsk, Dachnaya str., 60

shubin@nzpp.ruСибирский гос. унив. телекоммуникаций и информатики (СибГУТИ)РоссияSiberian State University of Telecommunications and Information Science (SibSUTIS)Russian Federation2023020420231726983Copyright © Шубин В.В., 20232023Шубин В.В.Shubin V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestnik.sibsutis.ru/jour/article/view/759

В статье описаны некоторые проблемы отказов в работе интегральных схем (ИС) и их предотвращение конструктивно-технологическими и схемо-топологическими способами. Рассмотрены, обобщены и систематизированы вопросы, связанные с проблемами отказов ИС, вызванных пробоем диэлектрика. Представлены некоторые примеры, которые могут быть использованы в практической деятельности при разработке ИС для повышения их надёжности на ранних этапах проектирования с учётом современных тенденций развития в области микроэлектроники.

The paper describes some problems of operation failures of integrated circuits (ICs) and corresponding preventative measures by constructive-technological, schematic-topological methods at the early stages of design process. The issues related to the problems of IC failures caused by dielectric breakdown are considered, generalized and systematized. Some examples that can be used in practice when developing ICs to improve their reliability, taking into account current trends in the microelectronics field.

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The authors declare that there are no conflicts of interest present.