Оптимизация топологий интегральных катушек индуктивности для синтеза СВЧ LC-фильтров в Si/SiGe/GaAs-системах на кристалле

В статье предложены модели планарных симметричных восьмиугольных катушек индуктивности, отличающиеся методом расчета индуктивности и учетом структуры и характеристик технологического процесса. Выведены формулы в закрытой форме для расчета характеристик моделей интегральных планарных катушек индуктивности различных конфигураций. Модели верифицированы путем сравнения АЧХ разработанной модели полосового фильтра (с частотами среза 14 ГГц и 18 ГГц) с АЧХ произведенных экспериментальных образцов в технологическом процессе SiGe 130 нм. АЧХ произведенных образцов фильтра находятся в диапазоне АЧХ разработанной модели фильтра в крайних точках технологического разброса. Предложен алгоритм оптимизации топологий интегральных планарных катушек индуктивности по критерию максимальной добротности на требуемой частоте. Синтез интегральных LC-фильтров в технологических процессах Si, SiGe и GaAs с использованием разработанного алгоритма оптимизации топологий интегральных катушек индуктивности позволяет минимизировать потери в полосе пропускания и максимизировать крутизну АЧХ. Программная реализация алгоритма оптимизации выполнена в ПО Mathcad. Программный расчет оптимальной топологии катушки индуктивности по критерию максимальной добротности занимает десятки секунд – единицы минут в зависимости от сложности структуры технологического процесса.

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