Integrated Inductor Layout Optimization for Synthesis of Microwave LC-Filters in Si/SiGe/GaAs Systems on a Chip

The paper proposes models of planar symmetric octagonal inductors that differ in the method of inductance calculating and consideration of the structure and characteristics of the technological process. The equations in a closed form for calculating models of integral planar inductors of various configurations are derived. The models were verified by comparing the frequency response of the developed 14-18 GHz bandpass filter model with the frequency response of experimental samples produced in the SiGe 130 nm process. The AFC of the produced filter samples is in the range of the developed filter model AFCs at the extreme points of the manufacturing tolerance. The developed algorithm of optimization for integral planar inductors layouts according to the criterion of maximum quality factor at the required frequency is presented. The use of the developed algorithm for integral planar inductors layouts optimization makes it possible to synthesize integrated LC-filters in Si, SiGe and GaAs technological processes with minimal passband losses and maximum gain slopes. The optimization algorithm is implemented as the program in the MathCad software. The optimal inductor layout calculation according to the criterion of maximum quality factor in the program takes tens of seconds a few minutes depending on the technological process structure complexity.

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