Parameters calculation of a logical channel for a secondary user in a group of two AlGaN/GaN Schottky barrier diodes with Ta, Ni, WSi and TiN anodes
Abstract
In this paper, AlGaN/GaN lateral Schottky barrier diodes (SBD) with anodes based on Ta, Ni, WSi and Ta are considered. Heterostructure AlGaN/i-GaN/buffer GaN was grown by Metal Organic Chemical Vapor Deposition (MOCVD) on silicon (111) substrate. All diodes had 5 nm (50%) anodes recess. Anode-cathode distance was varied from 3 to 7 цт. Diodes periphery (anodes width, W) was 10 mm. Diodes turn-ON voltage (by forward current 1 mA/mm) critically depends on anodes material and was 0.25 V, 0.45 V, 0.65 V and 1.6 V for Ta, Ni, WSi and TiN anodes respectively. Specific leakage current also depends on anodes material and was 67 цЛ/тт, 13 цЛ/тт, 5 цЛ/тт and 0.85 цЛ/тт for Ta, Ni, WSi and TiN respectively.
About the Authors
I. .. Fedin
АО НПФ «Микран»
Russian Federation
Russian Federation
E. .. Erofeev
НИИСЭС ТУСУР
Russian Federation
Russian Federation
V. .. Fedina
ТУСУР
Russian Federation
Russian Federation
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Review
For citations:
Fedin I..., Erofeev E..., Fedina V... Parameters calculation of a logical channel for a secondary user in a group of two AlGaN/GaN Schottky barrier diodes with Ta, Ni, WSi and TiN anodes. The Herald of the Siberian State University of Telecommunications and Information Science. 2018;(3):62-68. (In Russ.)
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