Failures of ICs Caused by Dielectric Breakdown
https://doi.org/10.55648/1998-6920-2023-17-2-69-83
Abstract
The paper describes some problems of operation failures of integrated circuits (ICs) and corresponding preventative measures by constructive-technological, schematic-topological methods at the early stages of design process. The issues related to the problems of IC failures caused by dielectric breakdown are considered, generalized and systematized. Some examples that can be used in practice when developing ICs to improve their reliability, taking into account current trends in the microelectronics field.
About the Author
V. V. Shubin
Siberian State University of Telecommunications and Information Science (SibSUTIS)
Russian Federation
Russian Federation
Vladimir V. Shubin, Cand. of Sci. (Engineering), assistant professor of the Department of Technical Electronics of Sib-SUTIS, Head of the Development of analog ICs of JSC "NZPP Vostok department"
630082, Novosibirsk, Dachnaya str., 60
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Review
For citations:
Shubin V.V. Failures of ICs Caused by Dielectric Breakdown. The Herald of the Siberian State University of Telecommunications and Information Science. 2023;17(2):69-83. (In Russ.) https://doi.org/10.55648/1998-6920-2023-17-2-69-83
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